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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER57N10A 100 Volts 57 Amps 25 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY Features * * * * * * * * * MOSKEYTM - Mosfet and Schottky in a single package Ultra Low On-Resistance 175C Operating Temperature Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request (MSAER57N10AR) Available with TX/TXV-level screening (MSAER57N10AV) or S-level screening (MSAER57N10AS) i.a.w. Microsemi internal procedure, PS11.50 Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25C SYMBOL BVDSS VGS ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC MAX. 100 +/-20 57 40 180 28 15 200 5.0 215 -55 to +175 -55 to +175 57 360 0.7 UNIT Volts Volts Amps Amps Amps mJ mJ V/ns Watts C C Amps Amps C/W Continuous Gate-to-Source Voltage Continuous Drain Current Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C Tj= 25C Tj= 100C Power Dissipation @ TC = 100C Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case DRAIN Mechanical Outline CoolPackTM1 Note: Pin-out shown for standard polarity GATE SOURCE Revision 1 MSAER57N10A Electrical Parameters @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Gate Threshold Voltage Gate-to-Source Leakage Current SYMBOL BVDSS VGS(th) IGSS Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) CONDITIONS VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 uA VGS = 20VDC, VDS = 0 TJ = 25C TJ = 125C VDS = 100 V, VGS = 0 V,TJ = 25C VDS = 80 V, VGS = 0 V, TJ = 125C VGS= 10V, ID= 28 A VDS 15 V; ID = 28 A VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 50 V, ID = 28 A, RG = 2.5 VGS = 10 V, VDS = 80V, ID = 28A IS = 28A, VGS = 0 V MIN 100 2.0 TYP. MAX 4.0 100 200 25 15 0.025 UNIT V V nA IDSS RDS(on) gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD 0.022 20 3100 1150 300 14 59 58 48 115 10 66 0.8 A mA S pF ns nC 0.87 V Body Diode typical Forward Voltage 0.9 0.85 0.8 VSD (V) 0.75 0.7 0.65 0.6 0.55 0.5 0 10 20 30 ISD (A) 40 50 60 Tj=25C Notes (1) (2) Pulse test, t 300 s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. Revision 1 |
Price & Availability of MSAER57N10A
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